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AUIRGP35B60PD

Infineon
Part Number AUIRGP35B60PD
Manufacturer Infineon
Description IGBT
Published Dec 16, 2020
Detailed Description AUTOMOTIVE GRADE AUIRGP35B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features  NPT Technology, Positi...
Datasheet PDF File AUIRGP35B60PD PDF File

AUIRGP35B60PD
AUIRGP35B60PD

Overview
AUTOMOTIVE GRADE AUIRGP35B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features  NPT Technology, Positive Temperature Coefficient  Lower VCE(SAT)  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distribution of Parameters  Higher Reliability  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V VCE(on) typ.
= 1.
85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters RCE(on) typ.
= 84m ID (FET equivalent) = 35A C Applications  PFC and ZVS SMPS Circuits  DC/DC Converter Charger Benefits  Parallel Operation for Higher Current Applications  Lower Conduction Losses and Switching Losses  Higher Switching Frequency up to 150kHz G Gate GC E TO-247AC AUIRGP35B60PD C Collector E Emitter Base Part Number AUIRGP35B60PD Package Type TO-247AC Standard Pack Form Quantity Tube 25 Orderable Part Number AUIRGP35B60PD Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max.
Units VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current ICM Pulse Collector Current (Ref.
Fig.
C.
T.
4) ILM Clamped Inductive Load Current IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFSM Maximum Repetitive Forward Current VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation ...


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