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30J311

Part Number	30J311
Manufacturer	Toshiba
Description	Silicon N-Channel IGBT
Published	Dec 19, 2020
Detailed Description	GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MO...
Datasheet	30J311 PDF File

Overview

GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.
30μs (Max.
) Low saturation voltage : VCE (sat) = 2.
7V (Max.
) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate−Emitter Voltage DC Collector Current 1ms Emitter−Collector Forward DC Current 1ms Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 600 ±20 30 60 30 60 145 150 −55~150 EQUIVALENT CIRCUIT UNIT V V...

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