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30J324

Toshiba Semiconductor
Part Number 30J324
Manufacturer Toshiba Semiconductor
Description Transistor Silicon N-Channel IGBT
Published Nov 13, 2015
Detailed Description GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fa...
Datasheet PDF File 30J324 PDF File

30J324
30J324

Overview
GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.
05 μs (typ.
) Low switching loss : Eon = 1.
00 mJ (typ.
) : Eoff = 0.
80 mJ (typ.
) • Low saturation voltage: VCE (sat) = 2.
0 V (typ.
) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperatu...


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