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AOD2610E

INCHANGE
Part Number AOD2610E
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Jan 12, 2021
Detailed Description isc N-Channel MOSFET Transistor AOD2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Mi...
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AOD2610E
AOD2610E

Overview
isc N-Channel MOSFET Transistor AOD2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.
5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pluse 110 A PD Total Dissipation @TC=25℃ 59.
5 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.
1 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor AOD2610E ELECTRICAL CHARACTERISTICS TC=25℃ unless ...


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