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AOD2610

Alpha & Omega Semiconductors
Part Number AOD2610
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Dec 2, 2013
Detailed Description AOD2610 60V N-Channel MOSFET General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized t...
Datasheet PDF File AOD2610 PDF File

AOD2610
AOD2610

Overview
AOD2610 60V N-Channel MOSFET General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.
In addition,switching behavior is well controlled with a soft recovery body diode.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.
5V) 60V 46A < 10.
7mΩ < 13.
5mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D D Bottom View D S G S G G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.
1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C TC=100° C VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 60 ±20 46 36 140 10 8 36 65 71.
5 35.
5 2.
5 1.
6 -55 to 175 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 41 1.
7 Max 20 50 2.
1 Units ° C/W ° C/W ° C/W Rev 0: Oct.
2011 www.
aosmd.
com Page 1 of 6 Free Datasheet http://www.
datasheet4u.
com/ AOD2610 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.
4 140 8.
7 15.
7 10.
7 85 0.
72 1 46 1605 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 3.
...


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