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AOT2610L

Alpha & Omega Semiconductors
Part Number AOT2610L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 19, 2021
Detailed Description AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary The AOT2610L & AOTF2610L uses trench MOSF...
Datasheet PDF File AOT2610L PDF File

AOT2610L
AOT2610L


Overview
AOT2610L/AOTF2610L 60V N-Channel MOSFET General Description Product Summary The AOT2610L & AOTF2610L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.
5V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 60V 55A / 35A < 10.
7mΩ < 13.
5mΩ D G AOT2610L DS G AOTF2610L S GD S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.
1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG AOT2610L AOTF2610L 60 ±20 55 35 39 25 140 9 7 36 65 75 31 37.
5 15.
5 2.
1 1.
3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC AOT2610L 15 60 2.
0 AOTF2610L 15 60 4.
8 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.
1.
0: March 2013 www.
aosmd.
com Page 1 of 7 AOT2610L/AOTF2610L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.
4 2 2.
5 V ID(ON) On state drain current VGS=...


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