DatasheetsPDF.com

BAS416

nexperia
Part Number BAS416
Manufacturer nexperia
Description Low-leakage diode
Published Feb 17, 2021
Detailed Description BAS416 Low-leakage diode 2 October 2020 Product data sheet 1. General description Epitaxial, medium-speed switching di...
Datasheet PDF File BAS416 PDF File

BAS416
BAS416


Overview
BAS416 Low-leakage diode 2 October 2020 Product data sheet 1.
General description Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package.
2.
Features and benefits • Plastic SMD package • Low leakage current: typ.
3 pA • Switching time: typ.
0.
8 us • Continuous reverse voltage: max.
75 V • Repetitive peak reverse voltage: max.
85 V • Repetitive peak forward current: max.
500 mA.
• AEC-Q101 qualified 3.
Applications • Low-leakage current applications in surface mounted circuits.
4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions IF VRRM forward current Tj = 25 °C repetitive peak reverse voltage VF forward voltage IF = 50 mA; Tj = 25 °C IR reverse current VR = 75 V; pulsed; Tj = 25 °C trr reverse recovery time IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tj = 25 °C Min Typ Max Unit - - 200 mA - - 85 V - - 1.
1 V - 0.
003 5 nA - 0.
8 3 µs 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 K cathode 2 A anode Simplified outline 1 2 SOD323 Graphic symbol K A aaa-032142 Nexperia BAS416 Low-leakage diode 6.
Ordering information Table 3.
Ordering information Type number Package Name BAS416 SOD323 Description plastic, surface-mounted package; 2 leads; 1.
3 mm pitch; 1.
7 mm x 1.
25 mm x 0.
95 mm body Version SOD323 7.
Marking Table 4.
Marking codes Type number BAS416 Marking code D4 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min VRRM repetitive peak reverse Tj = 25 °C - voltage VR reverse voltage - IF forward current - IFSM non-repetitive peak tp = 1 µs; square wave; Tj(init) = 25 °C - forward current tp = 1 ms; square wave; Tj(init) = 25 °C - tp = 1 s; square wave; Tj(init) = 25 °C - IFRM repetitive peak forward - current Ptot Tj Tamb Tstg total power dissipation...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)