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APT11N80BC3G

INCHANGE
Part Number APT11N80BC3G
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Feb 22, 2021
Detailed Description isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=800...
Datasheet PDF File APT11N80BC3G PDF File

APT11N80BC3G
APT11N80BC3G

Overview
isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.
45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 33 A PD Total Dissipation @TC=25℃ 156 W TJ Max.
Operating Junction Temperature -55~150 ℃ ...


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