DatasheetsPDF.com

APT11N80BC3G

Microsemi
Part Number APT11N80BC3G
Manufacturer Microsemi
Description Super Junction MOSFET
Published Feb 22, 2021
Detailed Description APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate...
Datasheet PDF File APT11N80BC3G PDF File

APT11N80BC3G
APT11N80BC3G

Overview
APT11N80BC3G 800V 11A 0.
45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS Symbol Parameter All Ratings: TC = 25°C unless otherwise specif ed.
APT11N80BC3G UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 800 11 33 ±20 ±30 156 1.
25 Volts Amps Volts Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Dr...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)