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APT60N60SCS

Microsemi
Part Number APT60N60SCS
Manufacturer Microsemi
Description MOSFET
Published Feb 25, 2021
Detailed Description 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ...
Datasheet PDF File APT60N60SCS PDF File

APT60N60SCS
APT60N60SCS

Overview
600V 60A 0.
045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 Package (B) TO-247 D3PAK (S) D G S MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy 3 All Ratings: TC = 25°C unless otherwise specified.
APT60N60B_SCS(G) UNIT 600 Volts 60 38 Amps 230 ±30 Volts 431 Watts 3.
45 W/°C -55 to 150 °C 260 50 V/ns 11 Amps 3 mJ 1950 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 600 RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 44A) IDSS Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) 0.
045 25 250 ±100 VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 3mA) 2.
1 3 3.
9 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
Volts Ohms μA nA Volts "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG.
"COOLMOS" is a trademark of Infineon Technologies AG.
" Microsemi Website - http://www.
microsemi.
com 050-7239 Rev C 4-2011 DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Coss Crss Qg Qgs Qgd td...


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