DatasheetsPDF.com

APT60N60SCSG

Advanced Power Technology
Part Number APT60N60SCSG
Manufacturer Advanced Power Technology
Description Super Junction MOSFET
Published Jan 30, 2008
Detailed Description www.DataSheet4U.com 600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb F...
Datasheet PDF File APT60N60SCSG PDF File

APT60N60SCSG
APT60N60SCSG

Overview
www.
DataSheet4U.
com 600V 60A 0.
045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.
C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 Package (S) D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT60N60B_SCS(G) 600 60 38 230 ±30 431 3.
45 -55 to 150 260 50 11 2 3 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 3 1950 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 4 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 44A) 0.
045 25 250 ±100 2.
1 3 3.
9 Ohms µA nA Volts 3-2006 050-7239 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 3mA) APT Website - http://www.
advancedpower.
com CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG.
"COOLMOS" is a trademark of Infineon Technologies AG.
" www.
DataSheet4U.
com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgd td(on) ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)