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C2404

Panasonic
Part Number C2404
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Feb 28, 2021
Detailed Description Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.40+–00..0150 0.16+...
Datasheet PDF File C2404 PDF File

C2404
C2404

Overview
Transistors 2SC2404 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 0.
40+–00.
.
0150 0.
16+–00.
.
0160 ■ Features 3 1.
50–+00.
.
0255 2.
8–+00.
.
32 • Optimum for RF amplification of FM/AM radios 0.
4±0.
2 • High transition frequency fT 5˚ • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 2 packing (0.
95) (0.
95) 1.
9±0.
1 (0.
65) / ■ Absolute Maximum Ratings Ta = 25°C 2.
90+–00.
.
0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 30 V c e.
d ty Collector-emitter voltage (Base open) VCEO 20 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.
1 1.
1–+00.
.
12 1.
1–+00.
.
13 V a e cle con Collector current IC 15 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C Marking Symbol: U 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit inc typ Collector-base voltage (Emitter open) c tinued ance Emitter-base voltage (Collector open) M is con inten Base-emitter voltage /Dis ma Forward current transfer ratio * D ance type, Transition frequency ten ce Reverse transfer capacitance ain nan (Common emitter) VCBO IC = 10 µA, IE = 0 30 VEBO IE = 10 µA, IC = 0 3 VBE VCB = 6 V, IE = −1 mA 0.
72 hFE VCB = 6 V, IE = −1 mA 65 260 fT VCB = 6 V, IE = −1 mA, f = 100 MHz 450 650 Cre VCB = 6 V, IE = −1 mA, f = 10.
7 MHz 0.
8 1.
0 V V V  MHz pF M inte Power gain d ma Noise figure GP VCB = 6 V, IE = −1 mA, f = 100 MHz 24 dB NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.
3 dB lane Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(p 2.
*: Rank classification Rank C D hFE 65 to 160 ...


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