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C2405

Panasonic
Part Number C2405
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Feb 28, 2021
Detailed Description Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC2405 Silicon NPN epitaxial planar type ...
Datasheet PDF File C2405 PDF File

C2405
C2405

Overview
Transistors This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2405 Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SA1034  Features  Package  Low noise voltage NV  Code  High forward current transfer ratio hFE  Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
Mini3-G1  Pin Name 1.
Base /  Absolute Maximum Ratings Ta = 25°C 2.
Emitter 3.
Collector Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) c type Collector-emitter voltage (Base open) n d tage.
ued Emitter-base voltage (Collector open) le s ontin Collector current a elifecyc disc Peak collector current n u t ed, Collector power dissipation roduc d typ Junction temperature te tin ur P tinue Storagetemperature VCBO 35 V VCEO 35 V VEBO 5 V IC 50 mA ICP 100 mA PC 200 mW Tj 150 °C Tstg –55 to +150 °C  Marking Symbol: S in n followingefdodiscon  Electrical Characteristics Ta = 25°C±3°C es plan Parameter Symbol Conditions a o includ type, Collector-base voltage (Emitter open) VCBO IC = 10 mA, IE = 0 c ed ce Collector-emitter voltage (Base open) M is ntinu tenan Emitter-base voltage (Collector open) isco ain Base-emitter voltage e/D e, m Collector-base cutoff current (Emitter open) D anc typ Collector-emitter cutoff current (Base open) inten ance Forward current transfer ratio * Ma inten Collector-emitter saturation voltage ma Transition frequency (planed Noise voltage VCEO VEBO VBE ICBO ICEO hFE VCE(sat) fT NV IC = 2 mA, IB = 0 IE = 10 mA, IC = 0 VCE = 1 V, IC = 100 mA VCB = 10 V, IE = 0 VCB = 10 V, IB = 0 VCE = 5 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 5 V, IE = –2 mA, f = 200 MHz VCB = 10 V, IC = 1 mA, GV = 80 dB, Rg = 100 kΩ, Function = FLAT Min Typ Max Unit 35 V 35 V 5 V 0.
7 1.
0 V 0.
1 mA 1 mA 180 700  0.
6 V 200 MHz 110 mV Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD J...


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