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C3871


Part Number C3871
Manufacturer Panasonic
Title Silicon NPN Transistor
Description Power Transistors 2SC3871 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 ...
Features 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with / one screw φ3.1±0.1 1.3±0.2 1.4±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Para...

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C3870 : Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 0.7±0.1 10.0±0.2 4.2±0.2 s Features 5.5±0.2 2.7±0.2 4.2±0.2 16.7±0.3 7.5±0.2 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Full-pack package which can be installed to the heat sink with / one screw φ3.1±0.1 1.3±0.2 1.4±0.1 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 14.0±0.5 Solder Dip 4.0 n d tage. ued Collector to base voltage VCBO 500 V a e cle s contin Collector to emitter voltage VCES 500 V cy is VCEO 400 V n u t life ed, d Emitter to base voltage V.

C3875 : 2SC3875 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR SOT-23 Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 60 50 5 150 150 150 -55~+150 V V V mA mW oC oC Tolerance : 0.1mm Dimensions (Unit : mm) 1. Emitter 2. Base 3. Collector Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown V.

C3875 : ST 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25? ) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 60 50 5 150 30 150 125 -55 to +125 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 79.

C3875 : 2SC3875 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 60 50 5 150 30 150 125 -55 to +125 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/201.




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