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R6504ENX

Part Number	R6504ENX
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Mar 1, 2021
Detailed Description	isc N-Channel MOSFET Transistor R6504ENX FEATURES ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(...
Datasheet	R6504ENX PDF File

Overview

isc N-Channel MOSFET Transistor R6504ENX FEATURES ·Drain Current –ID= 4.
0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
05Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4.
0 A IDM Drain Current-Single Pluse 12 A PD Total Dissipation @TC=25℃ 40 W TJ Max.
Operating Junction Temperature -55~150 ℃ T...

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