R6509ENX
Nch 650V 9A Power MOSFET
Datasheet
lOutline
VDSS
650V
RDS(on)(Max. )
0. 585Ω
ID
±9A
TO-220FM
PD
48W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
650
V
±9
A
±27
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, si...