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R6520KNJ

INCHANGE
Part Number R6520KNJ
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Mar 1, 2021
Detailed Description isc N-Channel MOSFET Transistor R6520KNJ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(M...
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R6520KNJ
R6520KNJ

Overview
isc N-Channel MOSFET Transistor R6520KNJ FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 205mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 231 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
54 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6520KNJ ELECTRICAL CHARACTERISTICS TC=25℃ unless o...


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