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R6520KNZ1

Part Number R6520KNZ1
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT...
Features
·Drain Current
  –ID= 20A@ TC=25℃
·Drain Source Voltage- : VDSS=650V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 205mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies an...

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R6520KNZ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 68 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.8 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6520KNZ ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.

R6520KNZ : .

R6520KNZ4 : R6520KNZ4   Nch 650V 20A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.205Ω ±20A 231W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline TO-247                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Tube Packing code C13 Marking R6520KNZ4 Basic ordering unit (pcs) 600 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±20 A ±60 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche .




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