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R8008ANX

Part Number	R8008ANX
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Mar 1, 2021
Detailed Description	isc N-Channel MOSFET Transistor R8008ANX FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Mi...
Datasheet	R8008ANX PDF File

Overview

isc N-Channel MOSFET Transistor R8008ANX FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.
03Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 66 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg S...

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