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R8008ANX

Rohm
Part Number R8008ANX
Manufacturer Rohm
Description Power MOSFET
Published Apr 3, 2012
Detailed Description R8008ANX 　　Nch 800V 8A Power MOSFET 　　 Datasheet VDSS 800V lOutline 　 RDS(on)(Max.) 1.03Ω ID ±8A TO-220FM PD ...
Datasheet PDF File R8008ANX PDF File

R8008ANX
R8008ANX

Overview
R8008ANX 　　Nch 800V 8A Power MOSFET 　　 Datasheet VDSS 800V lOutline 　 RDS(on)(Max.
) 1.
03Ω ID ±8A TO-220FM PD 66W 　 　　　　　　 lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed 　　to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) 500 Taping code - Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R8008ANX Unit Drain - Source voltage VDSS 800 V Continuous drain current TC = 25°C TC = 100°C ID*1 ID*1 ±8 A ±3.
9 A Pulsed drain current IDP*2 ±32 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 4 A Avalanche energy, single pulse EAS*3 4.
2 mJ Avalanche energy, repetitive EAR*4 3.
3 mJ Power dissipation (Tc = 25°C) PD 66 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ Reverse diode dv/dt dv/dt 15 V/ns 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/13 20160324 - Rev.
002 　 　 R8008ANX 　 　 　 　　 　 lAbsolute maximum ratings Parameter Drain - Source voltage slope lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet Symbol dv/dt Conditions VDS = 640V, ID = 8A Tj = 125℃ Values Unit 50 V/ns 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC RthJA Tsold Values Unit Min.
Typ.
Max.
- - 1.
87 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Drain - Source avalanche breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold v...


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