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2SC4805G

Panasonic
Part Number 2SC4805G
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4805G Silicon NPN epitaxial planar type...
Datasheet PDF File 2SC4805G PDF File

2SC4805G
2SC4805G

Overview
Transistors This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4805G Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification ■ Features ■ Package • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and • Code SMini3-F2 automatic insertion through the tape packing and the magazine packing / ■ Absolute Maximum Ratings Ta = 25°C • Marking Symbol: 3S • Pin Name 1: Base 2: Emitter 3: Collector Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 V c e.
d ty Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 V a e cle con Collector current IC 65 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 M is con inten Forward current transfer ratio * hFE VCE = 8 V, IC = 20 mA /Dis ma Transition frequency fT VCE = 8 V, IC = 15 mA, f = 1.
5 GHz ce pe, Collector output capacitance D nan e ty (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 1 µA 1 µA 50 300  7.
0 8.
5 GHz 0.
6 1.
0 pF ainte nanc Forward transfer gain M inte Maximum unilateral power gain d ma Noise figure S21e2 GUM NF VCE = 8 V, IC = 15 mA, f = 1.
5 GHz VCE = 8 V, IC = 15 mA, f = 1.
5 GHz VCE = 8 V, IC = 7 mA, f = 1.
5 GHz 7 9 dB 10 dB 2.
2 3.
0 dB (plane Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank Q R S No-rank hFE Marking symbol 50 to 120 3SQ 100 to 170 3SR 150 to 300 3SS ...


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