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2SC4805

Panasonic Semiconductor
Part Number 2SC4805
Manufacturer Panasonic Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm (0.425) 0.3+–0...
Datasheet PDF File 2SC4805 PDF File

2SC4805
2SC4805


Overview
Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification Unit: mm (0.
425) 0.
3+–00.
.
01 ■ Features 3 • High transition frequency fT • S-Mini type package, allowing downsizing of the equipment and 0.
15+–00.
.
0150 1.
25±0.
10 2.
1±0.
1 5˚ automatic insertion through the tape packing and the magazine packing 1 2 (0.
65) (0.
65) 1.
3±0.
1 / ■ Absolute Maximum Ratings Ta = 25°C 2.
0±0.
2 Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 15 0.
2±0.
1 V c e.
d ty Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 0 to 0.
1 0.
9±0.
1 0.
9–+00.
.
12 V a e cle con Collector current IC 65 mA lifecy , dis Collector power dissipation PC 150 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: 3S in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 M is con inten Forward current transfer ratio * hFE VCE = 8 V, IC = 20 mA /Dis ma Transition frequency fT VCE = 8 V, IC = 15 mA, f = 1.
5 GHz ce pe, Collector output capacitance D nan e ty (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 1 µA 1 µA 50 300  7.
0 8.
5 GHz 0.
6 1.
0 pF inte anc Forward transfer gain Ma inten Maximum unilateral power gain d ma Noise figure S21e2 GUM NF VCE = 8 V, IC = 15 mA, f = 1.
5 GHz VCE = 8 V, IC = 15 mA, f = 1.
5 GHz VCE = 8 V, IC = 7 mA, f = 1.
5 GHz 7 9 dB 10 dB 2.
2 3.
0 dB (plane Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank Q R S N...


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