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C5393


Part Number C5393
Manufacturer Panasonic
Title Silicon NPN Transistor
Description Power Transistors 2SC5393 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 10.0±0.2 5.5±0.2 Unit: mm 4...
Features
• High-speed switching
• High collector to base voltage VCBO
• Wide area of safe operation (ASO)
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one / screw 14.0±0.5 Solder Dip (4.0) e pe) I Absolute Maximum Ratings T...

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Datasheet C5393 PDF File








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C5390 : DataSheet.in 2SC5390 Silicon NPN Epitaxial High Frequency Amplifier ADE-208-492 (Z) 1st. Edition December. 1996 Features • Excellent high frequency characteristics fT = 1.4GHz (typ.) • Low output capacitance C ob = 2.4 pF (typ.) • Isolated package TO–126FM Outline TO–126FM 12 3 1. Emitter 2. Collector 3. Base DataSheet.in 2SC5390 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC PC * Tj Tstg 1 Ratings 110 110 3 200.

C5392 : Power Transistors 2SC5392 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features 9.9±0.3 4.6±0.2 2.9±0.2 3.0±0.5 q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) φ3.2±0.1 q Satisfactory linearity of foward current transfer ratio hFE q Dielectric breakdown voltage of the package: 5kV 15.0±0.5 / 1.4±0.2 2.6±0.1 1.6±0.2 e s Absolute Maximum Ratings (TC=25˚C) c type) Parameter Symbol Ratings Unit 13.7±0.2 4.2±0.2 n d tage. ued Collector to base voltage VCBO 800 V a e cle s contin Collector to emitter voltage VCES 800 V cy is VCEO 500 V n u t life ed, d Emitter .




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