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C5307

Toshiba
Part Number C5307
Manufacturer Toshiba
Description 2SC5307
Published Jun 11, 2015
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm • Hig...
Datasheet PDF File C5307 PDF File

C5307
C5307

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5307 High Voltage Switching Applications 2SC5307 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 20 mA, IB = 0.
5 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note) Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 400 400 7 50 100 25 500 1000 150 −55 to 150 Note: Mounted on a ceramic substrate (250 mm2 × 0.
8 t) Unit V V V mA mA mW °C °C Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Symbol ICBO IEBO VCEO hFE (1) hFE (2) VCE (sat) VBE Cob Test Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 20 mA IC = 20 mA, IB = 0.
5 mA VCE = 5 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
05 g (typ.
) Min Typ.
Max Unit ― ― 1 µA ― ― 1 µA 400 ― ― V 80 ― ― 100 ― 300 ― 0.
4 1.
0 V ― 0.
7 0.
85 V ― 4.
0 ― pF Marking Part No.
(or abbreviation code) AL Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1 2004-07-07 Collector current IC (mA) Common emitter 50 Ta = 25°C 40 30 IC – VCE 1 mA 900 800 700 600 500 400 300 200 20 10 IB = 50 µA 100 0 2 4 6 8 10 Collector-emitter voltage VCE (V) DC current gain hFE 2SC5307 100 30 10 3 1 0.
1 hFE – IC Tc = 100°C Common emitter VCE = 10 V 25 −25 1 10 Collector current IC (mA) 100 Collector-emitter saturation voltage VCE (sat) (mV) VCE (sat) – IC 280 Common emitter 240 IC/IB = 5 200 160 Tc = 100°C 120 25 80 −25 40 0 0 10 20 30 40 Collector current IC (mA) 5...


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