DatasheetsPDF.com

SEMiX603GB12E4Ip

Semikron
Part Number SEMiX603GB12E4Ip
Manufacturer Semikron
Description IGBT
Published Mar 22, 2021
Detailed Description SEMiX603GB12E4Ip SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4Ip Features • Homogeneous Si • Trench = Trenchgate t...
Datasheet PDF File SEMiX603GB12E4Ip PDF File

SEMiX603GB12E4Ip
SEMiX603GB12E4Ip

Overview
SEMiX603GB12E4Ip SEMiX® 3p shunt Trench IGBT Modules SEMiX603GB12E4Ip Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • Current sensing shunt resistor • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V • For storage and case temperature with TIM see document “TP(*) SEMiX 3p” GB + shunt © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(R...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)