DatasheetsPDF.com

CGHV1J006D

Wolfspeed
Part Number CGHV1J006D
Manufacturer Wolfspeed
Description GaN HEMT Die
Published Apr 8, 2021
Detailed Description CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electr...
Datasheet PDF File CGHV1J006D PDF File

CGHV1J006D
CGHV1J006D

Overview
CGHV1J006D 6 W, 18.
0 GHz, GaN HEMT Die Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.
25 μm gate length fabrication process.
This GaN-on-SiC product offers superior high frequency, high efficiency features.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D Features • 17 dB Typ.
Small Signal Gain at 10 GHz • 60% Typ.
PAE at 10 GHz • • 6 W Typical PSAT 40 V Operation • Up to 18 GHz Operation Applications • Satellite Communications • PTP Communications Links • Marine Radar • Pleasure Craft Radar • Port Vessel Traffic Services • Broadband Amplifiers • High Efficiency Amplifiers Packaging Information • Bare die are shipped in Gel-Pak® containers • Non-adhesive tacky membrane immobilizes die during shipment Large Signal Models Available for ADS and MWO Rev 1.
1 – April 2020 4600 Silicon Drive | Durham...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)