Part Number CGHV1J006D
Manufacturer Wolfspeed
Title GaN HEMT Die
Description Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm...
Features It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage. PN: CGHV1J006D Features
• 17 dB Typ. Small Signal Gain at 10 GHz
• 60% Typ. PAE at 10 GHz

• 6 W Typical PSAT 40 V Operation
• Up to 18 GHz Operation Applications
• Satellite Co...

File Size 737.09KB
Datasheet CGHV1J006D PDF File

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