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CGHV1J006D

Cree
Part Number CGHV1J006D
Manufacturer Cree
Description GaN HEMT Die
Published Apr 19, 2016
Detailed Description CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility ...
Datasheet PDF File CGHV1J006D PDF File

CGHV1J006D
CGHV1J006D

Overview
CGHV1J006D 6 W, 18.
0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.
25 μm gate length fabrication process.
This GaN-on-SiC product offers superior high frequency, high efficiency features.
It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: CGHV1J006D FEATURES • 17 dB Typ.
Small Signal Gain at 10 GHz • 60% Typ.
PAE at 10 GHz • 6 W Typical Psat • 40 V Operation • Up to 18GHz Operation APPLICATIONS • Satellite Communications • PTP Communications Links • Marine Radar • Pleasure Craft Radar • Port Vessel Traffic Services • Broadband Amplifiers • High Efficiency Amplifiers Packaging Information • Bare die are shipped in Gel-Pak® containers or on tape.
• Non-adhesive tacky membrane immobilizes die during shipment.
Rev 0.
– August 2014 Subject to change without notice.
www.
cree.
com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Drain-source Voltage VDSS 100 Gate-source Voltage VGS -10, +2 Storage Temperature TSTG -65, +150 Operating Junction Temperature TJ 225 Maximum Forward Gate Current IGMAX 1.
2 Maximum Drain Current1 IDMAX 0.
8 Thermal Resistance, Junction to Case (packaged)2 RθJC 17.
5 Thermal Resistance, Junction to Case (die only)2 RθJC 13.
2 Mounting Temperature TS 320 Note1 Current limit for long term reliable operation.
Note2 Eutectic die attach using 80/20 AuSn mounted to a 40 mil thick CMC carrier.
Units VDC VDC ˚C ˚C mA A ˚C/W ˚C/W ˚C Conditions 25˚C 25˚C 25˚C 25˚C 85˚C 85˚C 30 seconds Electrical Characteristics (Frequency = 10 GHz unless otherwise stated; TC = 25˚C) Characteristics DC Characteristics Gate Threshold Voltage Gate Quiescent Voltage Saturated Drain Current1 Drain-Source Breakdown Voltage On Resistance Gate Forward Voltage RF Characteristics Small Signal Gain Saturated Power Output1 Drain Efficienc...


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