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3DD5E

Part Number	3DD5E
Manufacturer	Inchange
Description	Silicon NPN Power Transistor
Published	May 8, 2021
Detailed Description	isc Silicon NPN Power Transistor 3DD5E DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation Vo...
Datasheet	3DD5E PDF File

Overview

isc Silicon NPN Power Transistor 3DD5E DESCRIPTION ·Excellent safe operating area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=75℃ TJ Junction Temperature 3 A 30 W 150 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal R...

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