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DMG4N60SCT

INCHANGE
Part Number DMG4N60SCT
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 9, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta...
Datasheet PDF File DMG4N60SCT PDF File

DMG4N60SCT
DMG4N60SCT

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 4.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.
5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 4.
5 A IDM Drain Current-Single Pluse 6 A PD Total Dissipation @TC=25℃ 113 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage...


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