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DMG4N60SK3

INCHANGE
Part Number DMG4N60SK3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published May 9, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Sta...
Datasheet PDF File DMG4N60SK3 PDF File

DMG4N60SK3
DMG4N60SK3

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 3.
7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.
3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 600 V ±30 V ID Drain Current-Continuous 3.
7 A IDM Drain Current-Single Pluse 5 A PD Total Dissipation @TC=25℃ 48 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage ...


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