DatasheetsPDF.com

MMG100D170B

MacMic
Part Number MMG100D170B
Manufacturer MacMic
Description IGBT
Published Jun 20, 2021
Detailed Description March 2016 PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(Highly rugge...
Datasheet PDF File MMG100D170B PDF File

MMG100D170B
MMG100D170B

Overview
March 2016 PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(Highly rugged SPT+ design) □ VCE(sat) with positive temperature coefficient □ Ultra Low Loss,High Ruggedness □ Free wheeling diodes with fast and soft reverse recovery Preliminary MMG100D170B 1700V 100A IGBT Module RoHS Compliant APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies □ Photovoltaic/Fuel cell IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃,TJmax=175℃ TC=100℃,TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TJmax=175℃ Values Unit 1700 V ±20 150 100 A 200 790 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current tp=1ms I2t TJ =150℃, t=10ms, VR=0V Values Unit 1700 V 100 A 200 TBD A2S MacMic Science & Technology Co.
, Ltd.
Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P.
R .
of China 1 Tel.
：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website ：www.
macmicst.
com MMG100D170B IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE=VGE, IC=4mA VCE(sat) Collector Emitter Saturation Voltage IC=100A, VGE=15V, TJ=25℃ IC=100A, VGE=15V, TJ=150℃ ICES Collector Leakage Current VCE=1700V, VGE=0V, TJ=25℃ VCE=1700V, VGE=0V, TJ=150℃ IGES Gate Leakage Current VCE=0V,VGE=±15V, TJ=25℃ Qg Gate Charge VCE=900V, IC=100A , VGE=±15V Cies Input Capacitance Cres Reverse Transfer Capacitance VCE=25V, VGE=0V, f =1MHz td(on) Turn on Delay Time tr Rise Time VCC=900V,IC=100A RG ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)