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2SA2012

Part Number	2SA2012
Manufacturer	ON Semiconductor
Description	Bipolar Transistor
Published	Dec 16, 2021
Detailed Description	Ordering number : EN6306B 2SA2012 Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP http://onsemi.com Applica...
Datasheet	2SA2012 PDF File

Overview

Ordering number : EN6306B 2SA2012 Bipolar Transistor –30V, –5A, Low VCE(sat) PNP Single PCP http://onsemi.
com Applicaitons • Relay drivers, lamp drivers, motor drivers, ﬂash Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit --30 V --30 V --5 V --5 A --8 A Continued on next page.
Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Pa...

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