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2SA2004

Panasonic Semiconductor
Part Number 2SA2004
Manufacturer Panasonic Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 ...
Datasheet PDF File 2SA2004 PDF File

2SA2004
2SA2004

Overview
Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.
9±0.
3 4.
6±0.
2 2.
9±0.
2 13.
7±0.
2 4.
2±0.
2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High-speed switching 15.
0±0.
5 I Features φ 3.
2±0.
1 1.
4±0.
2 1.
6±0.
2 0.
8±0.
1 3.
0±0.
5 2.
6±0.
1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −16 −8 20 2.
0 150 −55 to +150 °C °C Unit V V V A A W 0.
55±0.
15 2.
54±0.
30 5.
08±0.
50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D Package Junction temperature Storage temperature I Electrical Characteristics TC = 25°C ± 3°C Parameter Collector cutoff current Symbol ICBO ICEO Collector to emitter voltage Forward current transfer ratio VCEO hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn-on time Storage time Fall time VCE(sat) VBE(sat) ton tstg tf Conditions VCB = −60 V, IE = 0 VCE = −60 V, IE = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = − 0.
1 A VCE = −2 V, IC = −5 A IC = −5 A, IB = − 0.
25 A IC = −5 A, IC = − 0.
25 A IC = −4 A, IB1 = −400 mA IB2 = 400 mA, VCC = 50 V 0.
2 0.
1 0.
5 −60 100 30 −1.
2 −1.
7 0.
5 0.
15 1.
0 V V µs µs µs 230 Min Typ Max −100 −100 Unit µA µA V 1 ...


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