DatasheetsPDF.com

2SA2010

Part Number	2SA2010
Manufacturer	Panasonic Semiconductor
Description	Silicon PNP epitaxial planer type Transistor
Published	Mar 22, 2005
Detailed Description	Transistors 2SA2010 Silicon PNP epitaxial planer type Unit: mm For DC-DC converter For various driver circuits I Featu...
Datasheet	2SA2010 PDF File

Overview

Transistors 2SA2010 Silicon PNP epitaxial planer type Unit: mm For DC-DC converter For various driver circuits I Features • Low collector to emitter saturation voltage VCE(sat) , large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment.
• Complementary pair with 2SC5592 1 0.
40+0.
10 –0.
05 3 0.
16+0.
10 –0.
06 1.
50+0.
25 –0.
05 2.
8+0.
2 –0.
3 2 (0.
95) (0.
95) 1.
9±0.
1 2.
90+0.
20 –0.
05 10° 1.
1+0.
2 –0.
1 (0.
65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −15 − 15 −5 −10 − 2.
5 600 150 −55 to +150 Unit V V V A A mW °C °C Marking Symbol: AS Note) *: Measure on the ceramic substrate at 15 × 15 × 0.
6 mm3.
I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) Cob fT ton tstg toff Conditions VCB = −10 V, IE = 0 IC = −10 µA, IE = 0 IC = −1 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −2 V, IC = −100 mA VCE = −2 V, IC = −2.
5 A IC = −1 A, IB = −10 mA IC = −2.
5 A, IB = −50 mA Collector output capacitance Transition frequency Turn-on time *2 Storage time *2 Turn-off time *2 VCB = 10 V, IE = 0, f = 1 MHz VCB = −10 V, IE = 50 mA f = 200 MHz −15 −15 −5 200 100 − 140 − 270 40 180 35 110 10 −320 mV mV pF MHz ns ns ns 560 Min Typ Max − 0.
1 Unit µA V V V Note) *1: Rank classification *2: Reference to the measurement circuit.
0 to 0.
1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini Type Package (3-pin) 1.
1+0.
3 –0.
1 0.
4±0.
2 5° 1 2SA2010 I Measurement Circuit Transistors Input RB IB2 IB1 Output RL 470 µF VCC = −5 V PW = 20 µs DC ≤ 1% −201B1 = 201B2 = ...

Similar Datasheet

2SA2002 Silicon PNP Epitaxial Type Transistor - IDC
2SA2004 Silicon PNP Transistor - Panasonic Semiconductor
2SA2004 PNP Transistor - INCHANGE
2SA2005 Transistors - Rohm
2SA2006 High-speed Switching Transistor - ROHM
2SA2009 Silicon PNP epitaxial planer type Transistor - Panasonic Semiconductor
2SA201 PNP transistor - ETC
2SA2010 Silicon PNP epitaxial planer type Transistor - Panasonic Semiconductor
2SA2011 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SA2012 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)