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FQP9N30

ON Semiconductor
Part Number FQP9N30
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jun 28, 2022
Detailed Description FQP9N30 N-Channel QFET) MOSFET 300 V, 9.0 A, 450 mW Description This N−Channel enhancement mode power MOSFET is produc...
Datasheet PDF File FQP9N30 PDF File

FQP9N30
FQP9N30

Overview
FQP9N30 N-Channel QFET) MOSFET 300 V, 9.
0 A, 450 mW Description This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 9.
0 A, 300 V, RDS(on) = 450 mW (Max.
) @ VGS = 10 V, ID = 4.
5 A • Low Gate Charge (Typ.
17 nC) • Low Crss (Typ.
16 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.
) Parameter Symbol Value Unit Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Rec...


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