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IPB120N10S4-05

Inchange Semiconductor
Part Number IPB120N10S4-05
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jun 30, 2022
Detailed Description isc N-Channel MOSFET Transistor IPB120N10S4-05 FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS...
Datasheet PDF File IPB120N10S4-05 PDF File

IPB120N10S4-05
IPB120N10S4-05

Overview
isc N-Channel MOSFET Transistor IPB120N10S4-05 FEATURES ·Drain Current : ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.
3mΩ(Max) @VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 120 A IDM Drain Current-Single Pluse 480 A PD Total Dissipation @TC=25℃ 190 W TJ Max.
Operating Junction Temperature -55~175 ℃ ...


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