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IPB120N10S4-03

Infineon
Part Number IPB120N10S4-03
Manufacturer Infineon
Description Power-Transistor
Published Feb 15, 2016
Detailed Description IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD vers...
Datasheet PDF File IPB120N10S4-03 PDF File

IPB120N10S4-03
IPB120N10S4-03

Overview
IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD version) Features ID • N-channel - Normal Level - Enhancement mode • AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 100 V 3.
5 mW 120 A PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPB120N10S4-03 IPI120N10S4-03 IPP120N10S4-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N1003 4N1003 4N1003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=60A I AS - V GS - P tot T C=25°C T j, T stg - Value 120 120 480 770 120 ±20 250 -55 .
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+175 Unit A mJ A V W °C Rev.
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