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NVD5117PL

Inchange Semiconductor
Part Number NVD5117PL
Manufacturer Inchange Semiconductor
Description P-Channel MOSFET Transistor
Published Jun 30, 2022
Detailed Description isc P-Channel MOSFET Transistor NVD5117PL FEATURES ·Drain Current : ID= -61A@ TC=25℃ ·Drain Source Voltage : VDSS= -60...
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NVD5117PL
NVD5117PL

Overview
isc P-Channel MOSFET Transistor NVD5117PL FEATURES ·Drain Current : ID= -61A@ TC=25℃ ·Drain Source Voltage : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -61 A PD Total Dissipation @TC=25℃ 118 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTE...


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