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NTD18N06L

Inchange Semiconductor
Part Number NTD18N06L
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Jul 10, 2022
Detailed Description isc N-Channel MOSFET Transistor NTD18N06L FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(...
Datasheet PDF File NTD18N06L PDF File

NTD18N06L
NTD18N06L

Overview
isc N-Channel MOSFET Transistor NTD18N06L FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 54 A PD Total Dissipation @TC=25℃ 55 W TJ Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 2.
73 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specifi...


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