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HGTG30N60A4D

ON Semiconductor
Part Number HGTG30N60A4D
Manufacturer ON Semiconductor
Description N-Channel IGBT
Published Oct 3, 2022
Detailed Description SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high vo...
Datasheet PDF File HGTG30N60A4D PDF File

HGTG30N60A4D
HGTG30N60A4D

Overview
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG30N60A4D The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
The much lower on−state voltage drop varies only moderately between 25°C and 150°C.
The IGBT used is the development type TA49343.
The diode used in anti−parallel is the development type TA49373.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Features • >100 kHz Operation 390 V, 30 A • 200 kHz Operation 390 V, 18 A • 600 V Switching SOA Capability • Typical Fall Time 60 ns at TJ = 125°C • Low Conduction Loss • Temperature Compensating Saber™ Model • This is a Pb−Free Device www.
onsemi.
com C G E EC G COLLECTOR (FLANGE) TO−247−3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K 30N60A4D $Y &Z &3 &K 30N60A4D = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2004 1 April, 2020 − Rev.
2 Publication Order Number: HGTG30N60A4D/D HGTG30N60A4D ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) Parameter Symbol HGTG30N60A4D Unit Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 70 A IC110 60 A Collector Current Pulsed (Note 1) ICM 240 A Gate to Emitter Voltage Continuous VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TJ = 150°C, (Figure 2) SSOA 150 A at 600 V Power Dissipation Total at TC = 25°C PD 463 W Power Diss...


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