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HGTG30N60A4

ON Semiconductor
Part Number HGTG30N60A4
Manufacturer ON Semiconductor
Description SMPS IGBT
Published Apr 1, 2020
Detailed Description IGBT - SMPS 600 V, 60 A HGTG30N60A4 Description The HGTG30N60A4 combines the best features of high input impedance of a ...
Datasheet PDF File HGTG30N60A4 PDF File

HGTG30N60A4
HGTG30N60A4

Overview
IGBT - SMPS 600 V, 60 A HGTG30N60A4 Description The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has been optimized for fast switching applications.
Features • 60 A, 600 V @ TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.
8 V @ IC = 30 A • Typical Fall Time: 58 ns at TJ = 125°C • Low Conduction Loss • This is a Pb−Free Device Applications • UPS, Welder www.
onsemi.
com C G E EC G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K G30N60A4 © Semiconductor Components Industries, LLC, 2005 February, 2020 − Rev.
3 $Y &Z &3 &K G30N60A4 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: HGTG30N60A4/D HGTG30N60A4 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Ratings Unit Collector to Emitter Voltage Collector Current Continuous TC = 25°C TC = 110°C BVCES IC 600 V 75 A 60 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Power Dissipation Total Power Dissipation Derating TC = 25°C TC > 25°C ICM VGES VGEM SSOA PD 240 ±20 ±30 150 A at 600V 463 3.
7 A V V W W/°C Operating and Storage Junction Temperature Range TJ, TSTG −55 to +150 °C Maximum Lead Temperature for Soldering Leads at 0.
063 in (1.
6 mm) from Case for 10 s Package Body for 10 s, See Techbrief 334 TL TPKG 300 °C 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Pulse width limited...


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