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MMBFJ177LT1G

ON Semiconductor
Part Number MMBFJ177LT1G
Manufacturer ON Semiconductor
Description JFET Chopper
Published Jan 23, 2023
Detailed Description MMBFJ177LT1G, SMMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • S Prefix for Automotive and Other Application...
Datasheet PDF File MMBFJ177LT1G PDF File

MMBFJ177LT1G
MMBFJ177LT1G

Overview
MMBFJ177LT1G, SMMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG −25 Vdc Gate−Source Voltage VGS 25 Vdc Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1.
FR− 5 = 1.
0  0.
75  0.
062 in.
PD 225 mW 1.
8 mW/°C RqJA 556 °C/W TJ, Tstg − 55 to +150 °C www.
onsemi.
com 2 SOURCE 3 GATE 1 DRAIN 3 1 2 SOT−23 (TO−236) CASE 318−08 STYLE 10 MARKING DIAGRAM 6Y MG G 1 6Y = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION Device Package Shipping† MMBFJ177LT1G SOT−23 3000 / Tape & (Pb−Free) Reel SMMBFJ177LT1G SOT−23 3000 / Tape & (Pb−Free) Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994 1 October, 2016 − Rev.
8 Publication Order Number: MMBFJ177LT1/D MMBFJ177LT1G, SMMBFJ177LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate−Source Breakdown Voltage (VDS = 0, ID = 1.
0 mAdc) Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = −15 Vdc, ID = −10 nAdc) ON CHARACTERISTICS V(BR)GSS 30 IGSS −...


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