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TN1605H-8G

STMicroelectronics
Part Number TN1605H-8G
Manufacturer STMicroelectronics
Description high temperature SCR thyristor
Published Mar 5, 2023
Detailed Description TN1605H-8G Datasheet 16 A 800 V high temperature SCR thyristor in D²PAK package A G K A A K G D²PAK Product status TN1...
Datasheet PDF File TN1605H-8G PDF File

TN1605H-8G
TN1605H-8G

Overview
TN1605H-8G Datasheet 16 A 800 V high temperature SCR thyristor in D²PAK package A G K A A K G D²PAK Product status TN1605H-8G Product summary Order code TN1605H-8G Package D²PAK IT(RMS) 16 A VDRM/VRRM 800 V Tj max.
150 °C Features • High junction temperature: Tjmax.
= 150 °C • VDRM / VRRM = 800 V • VDSM / VRSM = 900 V • Tight IGT spread: 5 to 8 mA • High static immunity dV/dt = 500 V/μs at 150 °C • High turn-on rise dI/dt at 100 A/μs • Halogen-free molding, lead-free plating • ECOPACK2 compliant Applications • Inrush current limiting circuits in AC/DC converters • General purpose AC line load switching • Heating resistor control, solid state relays • Crowbar and power bus discharge circuits Description Thanks to its operating junction temperature up to 150°C, the TN1605H-8G offers high thermal performance operation up to 16 A rms in a D²PAK SMD package.
Its trade-off noise immunity (dV/dt = 500 V/μs) versus its gate triggering current (maximum IGT = 8 mA) and its turn-on current rise (dI/dt = 100 A/μs) allows to design robust and compact control circuit in AC/DC converters for inrush current limiting circuits and industrial drives, such as overvoltage crowbar protection, motor control circuits and power tools.
DS14130 - Rev 1 - December 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com TN1605H-8G Characteristics 1 Characteristics Table 1.
Absolute maximum ratings (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180° conduction angle) IT(AV) Average on-state current (180 ° conduction angle) ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C) I2t I2t value for fusing VDRM, VRRM Repetitive peak off-state voltage TC = 134 °C TC = 134 °C TC = 139 °C TC = 142 °C tP = 8.
3 ms tP = 10 ms tP = 10 ms VDSM, VRSM Non repetitive peak off-state voltage tP = 10 ms dl/dt IGM PG(AV) VRGM Tstg Tj Tl Critical rate of rise of on-state current IG = 2 x IGT, tr < 10...


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