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11N80-FL

UTC
Part Number 11N80-FL
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Oct 28, 2023
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 11N80-FL 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-FL is a high voltag...
Datasheet PDF File 11N80-FL PDF File

11N80-FL
11N80-FL

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 11N80-FL 11A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
 FEATURES * RDS(ON) ≤ 0.
92 Ω @ VGS=10V, ID=5.
5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N80L-TF1-T 11N80G-TF1-T 11N80L-TF2-T 11N80G-TF2-T 11N80L-TF3-T 11N80G-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-220F Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2021 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-C82.
A 11N80-FL Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 800 V VGSS ±30 V Continuous Drain Current Pulsed Drain Current (Note 2) ID 11 A IDM 22 A Avalanche Energy Single Pulsed (Note 3) EAS 302 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.
02 V/ns Power Dissipation Junction Temperature PD 40 W TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L = 10mH, IAS = 7.
77A, VDD = 100V, RG = 25 Ω, Starting TJ = 25°C 4.
ISD ≤ 11A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJ...


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