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11N80-C

UTC
Part Number 11N80-C
Manufacturer UTC
Description N-CHANNEL MOSFET
Published Apr 21, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-C provide excellent...
Datasheet PDF File 11N80-C PDF File

11N80-C
11N80-C

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
 FEATURES0 * RDS(ON) ≤ 0.
9 Ω @ VGS=10V, ID=5.
5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.
Drain 1 1 1 Power MOSFET TO-3P TO-220F1 TO-220F2 1.
Gate 3.
Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 11N80L-TF1-T 11N80G-TF1-T 11N80L-TF2-T 11N80G-TF2-T 11N80L-T3P-T 11N80G-T3P-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-3P Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube 11N80G-TF1-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, T3P: TO-3P (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING Lot Code UTC 11N80 1 L: Lead Free G: Halogen Free Date Code www.
unisonic.
com.
tw Copyright © 2019 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R205-450.
C 11N80-C Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 11 A Pulsed (Note 2) IDM 22 A Avalanche Energy Single Pulsed (Note 3) EAS 451 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 1.
2 V/ns Power Dissipation TO-220F1/ TO-220F2 TO-3P PD 40 W 297 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °С °С Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited by maximum junction temperature.
3.
L=10mH, IAS=9.
5A, VDD=90V, RG=25 Ω, Starting TJ = 25°C 4.
ISD≤...


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