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SSM3K16CTC

Toshiba
Part Number SSM3K16CTC
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Dec 14, 2023
Detailed Description MOSFETs Silicon N-Channel MOS SSM3K16CTC 1. Applications • High-Speed Switching • Analog Switches 2. Features (1) 1.5 V ...
Datasheet PDF File SSM3K16CTC PDF File

SSM3K16CTC
SSM3K16CTC

Overview
MOSFETs Silicon N-Channel MOS SSM3K16CTC 1.
Applications • High-Speed Switching • Analog Switches 2.
Features (1) 1.
5 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 5.
6 Ω (max) (@VGS = 1.
5 V) RDS(ON) = 4.
0 Ω (max) (@VGS = 1.
8 V) RDS(ON) = 3.
0 Ω (max) (@VGS = 2.
5 V) RDS(ON) = 2.
2 Ω (max) (@VGS = 4.
5 V) 3.
Packaging and Pin Assignment SSM3K16CTC CST3C ©2016-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-12 2017-11-30 Rev.
2.
0 SSM3K16CTC 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ±10 V Drain current (DC) (Note 1) ID 200 mA Drain current (pulsed) (Note 1) IDP 400 Power dissipation (Note 2) PD 500 mW Channel temperature Tch 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Device mounted on a 25.
4 mm × 25.
4 mm × 1.
6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note: Note: Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
The MOSFETs in this device are sensitive to electrostatic discharge.
When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambie...


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