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SSM3K16CT

Toshiba Semiconductor
Part Number SSM3K16CT
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Feb 14, 2008
Detailed Description SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Analog...
Datasheet PDF File SSM3K16CT PDF File

SSM3K16CT
SSM3K16CT

Overview
SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Analog Switch Applications Unit: mm • Suitable for high-density mounting due to compact package • Low ON-resistance : Ron = 3.
0 Ω (max) (@VGS = 4 V) : Ron = 4.
0 Ω (max) (@VGS = 2.
5 V) : Ron = 15 Ω (max) (@VGS = 1.
5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 100 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEDEC CST3 - temperature, etc.
) may cause this product to decrease in the JEITA - reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the TOSHIBA 2-1J1B absolute maximum ratings.
Weight: 0.
75 mg (typ.
) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board (10 mm × 10 mm × 1.
0 t, Cu Pad: 100 mm2 ) Marking (Top View) Polarity mark Pin Condition (Top View) Polarity mark (on the top) Equivalent Circuit 3 1 SC 3 2 1.
Gate 2.
Source 3.
Drain *Electrodes: on the bottom 1 2 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected against electrostatic discharge.
Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
Start of commercial production 2004-08 1 2014-03-01 Electrical Characte...


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