Part Number FDB33N25
Manufacturer ON Semiconductor
Title N-Channel MOSFET
Description UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resis...
• RDS(on) = 94 mW (Max.) @ VGS = 10 V, ID = 16.5 A
• Low Gate Charge (Typ. 36.8 nC)
• Low Crss (Typ. 39 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Lighting
• Uninterruptible Power Supply
• AC−DC Power Supply DATA SHEET VDSS...

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FDB33N25 : May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D D G G S D -PAK FDB Series 2 G D S I -PAK FDI Series 2 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source vo.

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