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FDB33N25

Fairchild Semiconductor
Part Number FDB33N25
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published May 3, 2007
Detailed Description FDB33N25 / FDI33N25 250V N-Channel MOSFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.0...
Datasheet PDF File FDB33N25 PDF File

FDB33N25
FDB33N25

Overview
FDB33N25 / FDI33N25 250V N-Channel MOSFET FDB33N25 / FDI33N25 250V N-Channel MOSFET Features • 33A, 250V, RDS(on) = 0.
094Ω @VGS = 10 V • Low gate charge ( typical 36.
8 nC) • Low Crss ( typical 39 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description May 2006 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficient switched...


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