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FDC3535

ON Semiconductor
Part Number FDC3535
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 21, 2023
Detailed Description FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.1 A, 183 mΩ Features General...
Datasheet PDF File FDC3535 PDF File

FDC3535
FDC3535

Overview
FDC3535 P-Channel Power Trench® MOSFET FDC3535 P-Channel Power Trench® MOSFET -80 V, -2.
1 A, 183 mΩ Features General Description „ Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.
1 A „ Max rDS(on) = 233 mΩ at VGS = -4.
5 V, ID = -1.
9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant This P-Channel MOSFET is produced using ON Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications „ Load Switch „ Synchronous Rectifier S D D Pin 1 G D D SuperSOTTM -6 S4 D...


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